Home UP BOARD Question Papers NCERT Solutions Sample Papers CBSE Notes NCERT Books CBSE Syllabus

Class 12 Physics NCERT Solutions For Chapter 14 Semiconductor Electronics Materials, Devices and Simple Circuits

semiconductor electronics: materials, devices and simple circuits class 12 ncert solutions, mini projects, led projects, digital electronics, pcb design, robotics projects, pcb design software, microcontroller based projects, microcontroller projects, electronic experiments, breadboard, electronic material, breadboard projects, 555 timer projects, electronics lab, diy electronics, electronics for dummies, breadboard kit, electronics types, electronics lecture, light emitting device… , ncert solutions, chapter 14,chapter 14ncert solutions, semiconductor electronics materials, devices and simple circuits ncert solutions, ncert solutions for class 12 physics, class 12 physics ncert solutions, ncert solutions for class 12, ncert class 12 physics, class 12 physics, class 12 physics

Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits

Download NCERT Solutions for Class 12 Physics

(Link of Pdf file is given below at the end of the Questions List)

In this pdf file you can see answers of following Questions


Question 14.1 In an n-type silicon, which of the following statement is true:
(a) Electrons are majority carriers and trivalent atoms are the dopants.
(b) Electrons are minority carriers and pentavalent atoms are the dopants.
(c) Holes are minority carriers and pentavalent atoms are the dopants.
(d) Holes are majority carriers and trivalent atoms are the dopants.

Question 14.2 Which of the statements given in Exercise 14.1 is true for p-type semiconductos.

Question 14.3 Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
(a) (Eg)Si < (Eg)Ge < (Eg)C (b) (Eg)C < (Eg)Ge > (Eg)Si (c) (Eg)C > (Eg)Si > (Eg)Ge (d) (Eg)C = (Eg)Si = (Eg)Ge

Question 14.4 In an unbiased p-n junction, holes diffuse from the p-region to n-region because
(a) free electrons in the n-region attract them.
(b) they move across the junction by the potential difference .
(c) hole concentration in p-region is more as compared to n-region.
(d) All the above.

Question 14.5 When a forward bias is applied to a p-n junction, it (a) raises the potential barrier.
(b) reduces the majority carrier current to zero.
(c) lowers the potential barrier.
(d) None of the above.

Question 14.6 For transistor action, which of the following statements are correct:
(a) Base, emitter and collector regions should have similar size and doping concentrations.
(b) The base region must be very thin and lightly doped.
(c) The emitter junction is forward biased and collector junction is reverse biased.
(d) Both the emitter junction as well as the collector junction are forward biased.

Question 14.7 For a transistor amplifier, the voltage gain (a) remains constant for all frequencies.
(b) is high at high and low frequencies and constant in the middle frequency range.
(c) is low at high and low frequencies and constant at mid frequencies.
(d) None of the above.

Question 14.8 In half-wave rectification, what is the output frequency if the input frequency is 50 Hz. What is the output frequency of a full-wave rectifier for the same input frequency.

Question 14.9 For a CE-transistor amplifier, the audio signal voltage across the collected resistance of 2 kΩ is 2 V. Suppose the current amplification factor of the transistor is 100, find the input signal voltage and base current, if the base resistance is 1 kΩ.

Question 14.10 Two amplifiers are connected one after the other in series (cascaded). The first amplifier has a voltage gain of 10 and the second has a voltage gain of 20. If the input signal is 0.01 volt, calculate the output ac signal.

Question 14.11 A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?


Question 14.12 The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni = 1.5 × 1016 m–3. Is the material n-type or p-type?

Question 14.13 In an intrinsic semiconductor the energy gap Eg is 1.2eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration ni is given by 0 exp – 2 g i B E n n k T = where n0 is a constant.

Question 14.14 In a p-n junction diode, the current I can be expressed as 0 exp – 1 2 B eV I I k T where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kB is the Boltzmann constant (8.6×10–5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10–12 A and T = 300 K, then (a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

Question 14.15 You are given the two circuits as shown in Fig.14.44. Show that circuit (a) acts as OR gate while the circuit (b) acts as AND gate.

Question 14.16 Write the truth table for a NAND gate connected as given in Fig. 14.45.Hence identify the exact logic operation carried out by this circuit.

Question 14.17 You are given two circuits as shown in Fig. 14.46, which consist of NAND gates. Identify the logic operation carried out by the two circuits.

Question 14.18 Write the truth table for circuit given in Fig. 14.47 below consisting of NOR gates and identify the logic operation (OR, AND, NOT) which this circuit is performing. (Hint: A = 0, B = 1 then A and B inputs of second NOR gate will be 0 and hence Y=1. Similarly work out the values of Y for other combinations of A and B. Compare with the truth table of OR, AND, NOT gates and find the correct one.)

Question 14.19 Write the truth table for the circuits given in Fig. 14.48 consisting of NOR gates only. Identify the logic operations (OR, AND, NOT) performed by the two circuits.

Please Wait pdf file is loading (कृपया इंतजार करें pdf file लोड हो रही है)...
Loading speed will depend up on your download speed. Pdf file के लोड होने में लगा समय आपकी डाउनलोड स्पीड पर निर्भर करेगा

Loading document ...
Loading page ...

Download pdf file links for Semiconductor Electronics Materials, Devices ... Class 12 NCERT

To download above pdf file Link is given below.
उपर दिखायी दे रही पीडीऍफ़ को डाउनलोड करने का लिंक नीचे दिया गया है

Important Links

NCERT CBSE Notes Class 6 - 12 Download pdf

Ncert Solution for class 6 to 12 download in pdf

CBSE Model test papars Download in pdf

NCERT Books for Class 1- 12 Hindi & English Medium

Mathematics Biology Psychology
Chemistry English Economics
Sociology Hindi Business Studies
Geography Science Political Science
Statistics Physics Accountancy

CBSE Syllabus Class 9 to 12 Year 2021-22

Last year CBSE Question paper

Important Links

Follow Us On

Face book page ncerthelp twitter page youtube page linkdin page

Solved Last Year Question Paper

If You have any problem/query related to above page please send us your Query to [email protected] with code Serial No1564/1109. Thanks

Please Share this webpage on facebook, whatsapp, linkdin and twitter.

Facebook Twitter whatsapp Linkdin

Copyright @ ncerthelp.com A free educational website for CBSE, ICSE and UP board.